Statistical sensitivity simulation for integrating design and testing of MOSFET integrated circuits

Author

Wong, W.W. ; Liou, J.J. ; Yuan, J.S. ; Wu, D.M.

Author_Institution

Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1991

fDate

15-17 April 1991

Firstpage

104

Lastpage

108

Abstract

A computer-aided design tool for testing MOSFET integrated circuit performance as functions of MOSFET channel length and channel width variations is presented. The numerical model, which is developed based on the Tellegen´s theorem and a database that contains the statistical information of MOSFET process parameters, is implemented in SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is carried out to illustrate the usefulness of the present work.<>

Keywords

MOS integrated circuits; circuit CAD; digital simulation; insulated gate field effect transistors; MOSFET integrated circuits; SPICE2 circuit simulator; Tellegen´s theorem; channel length; channel width; computer-aided design tool; numerical model; operational amplifier; sensitivity simulation; statistical information; Circuit simulation; Circuit testing; Computational modeling; Databases; Integrated circuit modeling; Integrated circuit testing; MOSFET circuits; Network topology; Sensitivity analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Test Symposium, 1991. 'Chip-to-System Test Concerns for the 90's', Digest of Papers

Conference_Location

Atlantic City, NJ, USA

Type

conf

DOI

10.1109/VTEST.1991.208141

Filename

208141