DocumentCode
3116764
Title
Effect of polarization charges on electron transport properties of Al0.2Ga0.8N/GaN HFETs
Author
Arabshahi, H.
Author_Institution
Dept. of Phys., Tarbiat Moallem Univ. of Sabzevar, Iran
fYear
2002
fDate
18-19 Nov. 2002
Firstpage
183
Lastpage
188
Abstract
A self-consistent Monte Carlo simulation has been developed and used to model electron transport in wurtzite phase AlGaN/GaN heterojunction FETs. Planar Al0.2Ga0.8N/GaN HFET structures with a 78 nm Al0.2Ga0.8N pseudomorphically strained layer were simulated, where the spontaneous and piezoelectric polarization effects were taken into account. The polarization effects was shown to not only increase the current density, but also improve the electron transport in the interface layer by inducing a higher electron density to the positive polarized sheet and away from the buffer layer.
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; current density; electron density; electron mobility; field effect transistors; gallium compounds; piezoelectricity; polarisation; semiconductor device models; wide band gap semiconductors; 78 nm; AlGaN-GaN; HFET structure pseudomorphically strained layers; buffer layers; current density; electron transport polarization charge effects; heterojunction FET electron transport; interface layer electron transport; positive polarized sheet electron density; self-consistent Monte Carlo simulations; spontaneous/piezoelectric polarization effects; wurtzite phase AlGaN/GaN; Aluminum gallium nitride; Buffer layers; Current density; Electrons; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Piezoelectric polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN
0-7803-7530-0
Type
conf
DOI
10.1109/EDMO.2002.1174952
Filename
1174952
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