Temperature dependence of avalanche multiplication in GaAs [p i n diodes]

Author

Groves, C. ; Ghin, R. ; Harrison, C.N. ; David, J.P.R. ; Rees, G.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

226

Lastpage

230

Abstract

Measurements of avalanche photomultiplication and breakdown on a series of GaAs p⁺-i-n⁺ diodes show that the sensitivity of impact ionisation to temperature increases with i-region thickness. The effect is attributed to the increase in the number of phonon scattering events in the longer avalanche multiplication regions.

Keywords

III-V semiconductors; avalanche breakdown; gallium arsenide; impact ionisation; leakage currents; p-i-n diodes; semiconductor device breakdown; semiconductor device measurement; 1 to 0.025 micron; 20 to 500 K; GaAs; GaAs p-i-n diode avalanche multiplication temperature dependence; avalanche breakdown; avalanche multiplication regions; avalanche photomultiplication; high electric field effects; i-region thickness; impact ionisation temperature sensitivity; leakage currents; phonon scattering events; Avalanche breakdown; Diodes; Gallium arsenide; Impact ionization; Leakage current; Phonons; Temperature dependence; Temperature distribution; Temperature measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174962

Filename

1174962