High performance III-V MOSFETs: a dream close to reality?

Author

Kalna, K. ; Yang, L. ; Asenov, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

243

Lastpage

248

Abstract

We have studied the performance potential of sub 100 nm compound MOSFETs with InGaAs channel and high-k gate insulator, using ensemble Monte Carlo simulations. The results show that such devices could deliver 200-300% increase in the drive current compared to conventional MOSFETs with analogous channel lengths and device structure. This improvement is much higher than the 20-30% drive current increase in similar devices with strained Si channels on virtual SiGe substrates. As a viable solutions to the constant drive current bottleneck anticipated in the International Roadmap for Semiconductors for the next generations of Si MOSFETs it advocates further research in respect of the manufacturability of compound MOSFETs.

Keywords

III-V semiconductors; MOSFET; Monte Carlo methods; gallium arsenide; indium compounds; semiconductor device models; 100 nm; InGaAs; InGaAs channels; Si MOSFET; compound MOSFET manufacturability; drive current increase; ensemble Monte Carlo simulations; high performance III-V MOSFET; high-k gate insulators; strained Si channels; virtual SiGe substrates; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; Indium gallium arsenide; Insulation; MOSFETs; Semiconductor device manufacture; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174965

Filename

1174965