DocumentCode :
3117145
Title :
High sum-rate three-write and non-binary WOM codes
Author :
Yaakobi, Eitan ; Shpilka, Amir
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
1386
Lastpage :
1390
Abstract :
Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q levels. Each cell is initially in level 0 and can only increase its level. A t-write WOM code is a coding scheme which allows one to store t messages to the WOM such that on consecutive writes every cell´s level does not decrease. The sum-rate of the WOM code, which is the ratio between the total amount of information written in the t writes and the number of memory cells, is bounded by log2(t + 1). Our main contribution in this work is a construction of binary three-write WOM codes with sum-rate approaching 1.885 for sufficiently large number of cells, while the upper bound is 2. This improves upon a recent construction of sum-rate 1.809. We also give constructions of non-binary WOM codes which give better sum-rate than the currently best known ones.
Keywords :
binary codes; binary three-write WOM codes; coding scheme; high sum-rate three-write WOM codes; memory cells; memory elements; nonbinary WOM codes; storage medium; t-write WOM code; upper bound; write-once memory codes; Ash; Complexity theory; Decoding; Encoding; Upper bound; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
Conference_Location :
Cambridge, MA
ISSN :
2157-8095
Print_ISBN :
978-1-4673-2580-6
Electronic_ISBN :
2157-8095
Type :
conf
DOI :
10.1109/ISIT.2012.6283488
Filename :
6283488
Link To Document :
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