DocumentCode
3117161
Title
Short q-ary WOM codes with hot/cold write differentiation
Author
Cassuto, Yuval ; Yaakobi, Eitan
Author_Institution
Electr. Eng. Dept., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
2012
fDate
1-6 July 2012
Firstpage
1391
Lastpage
1395
Abstract
We construct new WOM codes with practical design considerations. First the problem of 2 cell q-ary WOM codes is addressed with a construction that uses lattice tilings. The resulting codes for arbitrary numbers of input bits are shown to be within a small additive constant from the capacity. Then we introduce a new model of WOM codes that support data bits with different update requirements. Differentiation between frequently written (hot) bits and rarely written (cold) ones allows a large number of re-writes while leveling the wear between the hot and cold input bits.
Keywords
codes; storage management chips; cell q-ary WOM codes; data bits; hot-cold write differentiation; lattice tilings; short Q-ary WOM codes; write-once memories; Ash; Decoding; Encoding; Lattices; Shape; Tiles; Vectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
Conference_Location
Cambridge, MA
ISSN
2157-8095
Print_ISBN
978-1-4673-2580-6
Electronic_ISBN
2157-8095
Type
conf
DOI
10.1109/ISIT.2012.6283489
Filename
6283489
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