• DocumentCode
    3117161
  • Title

    Short q-ary WOM codes with hot/cold write differentiation

  • Author

    Cassuto, Yuval ; Yaakobi, Eitan

  • Author_Institution
    Electr. Eng. Dept., Technion-Israel Inst. of Technol., Haifa, Israel
  • fYear
    2012
  • fDate
    1-6 July 2012
  • Firstpage
    1391
  • Lastpage
    1395
  • Abstract
    We construct new WOM codes with practical design considerations. First the problem of 2 cell q-ary WOM codes is addressed with a construction that uses lattice tilings. The resulting codes for arbitrary numbers of input bits are shown to be within a small additive constant from the capacity. Then we introduce a new model of WOM codes that support data bits with different update requirements. Differentiation between frequently written (hot) bits and rarely written (cold) ones allows a large number of re-writes while leveling the wear between the hot and cold input bits.
  • Keywords
    codes; storage management chips; cell q-ary WOM codes; data bits; hot-cold write differentiation; lattice tilings; short Q-ary WOM codes; write-once memories; Ash; Decoding; Encoding; Lattices; Shape; Tiles; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
  • Conference_Location
    Cambridge, MA
  • ISSN
    2157-8095
  • Print_ISBN
    978-1-4673-2580-6
  • Electronic_ISBN
    2157-8095
  • Type

    conf

  • DOI
    10.1109/ISIT.2012.6283489
  • Filename
    6283489