Title :
Broad-band optical receiver for multigigabit-per-second (40Gb/s) optical communication systems
Author :
Madureira, M.A.M. ; Monteiro, P.M.P. ; Aguiar, Rui L. ; Violas, Manuel ; Gloanec, Maurice ; Leclerc, Eric ; Lefebvre, Benoit
Author_Institution :
Instituto de Telecomunicacoes, Aveiro Univ., Portugal
Abstract :
This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC receiver suitable for 40 Gbps data transmission rates. The circuit was implemented on a MMIC PH15 process from United Monolithic Semiconductors (UMS). This process features 0.13 μm pseudomorphic transistors (0.135 μm PHEMT) with low resistance, good reliability and an ft of approximately 100 GHz. This circuit presents a 49 dBΩ gain, low noise figure and wide bandwidth considering detector input capacitance in excess of 100 fF. An analysis involving noise, stability and the influence of bond-wire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were evaluated. On-going on-wafer characterisation results are also presented and compared with simulation data, showing good agreement.
Keywords :
HEMT integrated circuits; III-V semiconductors; circuit optimisation; circuit stability; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; optical receivers; 0.13 micron; 0.135 micron; 100 GHz; 100 fF; 40 Gbit/s; 49 dB; GaAs; MMIC gain/noise figure/bandwidth; bond-wire inductance; broad-band optical receivers; circuit optimisation; circuit stability; detector input capacitance; high-bandwidth transimpedance GaAs MMIC receivers; low resistance PHEMT; optical communication system data transmission rate; output impedance matching; pseudomorphic transistor reliability; Bandwidth; Capacitance; Circuits; Data communication; Gallium arsenide; MMICs; Noise figure; Optical fiber communication; Optical receivers; PHEMTs;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174970
