MOCVD growth and characterization of Pb-based ferroelectric thin films

Pb-based ferroelectric thin films such as PbTiO₃, Pb(Zr,Ti)O₃ (PZT), (Pb,La)(Zr,Ti)O₃ (PLZT) and Pb(Zr,Ti,Nb)O₃ (PZTN) were successfully prepared by MOCVD. A variety of experiments were performed to demonstrate the advantages of the MOCVD process. The advantages of MOCVD, including a high degree of controllability of the film composition, crystalline structure and electrical properties, are reviewed. The variation in the film thickness of PZT film on a 8 inch wafer was ±1.2%. The electrical properties of PZT films grown on Ir and IrO₂ electrodes were also described. The step coverage characteristics were investigated and good step coverage figure of 74% for PZT films on SiO₂/Si was also obtained. The possibility of scaling up the process to commercial-based production was also investigated and PZT films with a high uniformity in the film component of ±1.1%, a film thickness of ±1.5% and a dielectric constant of ±5% were obtained on a 6 inch wafer