Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures

Author

Tokumitsu, Eisuke ; Nakamura, Ryo-ichi ; Ishiwara, Hiroshi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

107

Abstract

We report fabrication and characterization of p-channel metal-ferroelectric-insulator-semiconductor (MFIS)-FETs using the PLZT/STO/Si(100) structures and demonstrate nonvolatile memory operations of the MFISFETs. It is found that I_D-V_G characteristics of PLZT/STO/Si MFIS-FETs show a hysteresis loop due to the ferroelectric nature of the PLZT film. It is also demonstrated that the I_D can be controlled by the “write” pulse, which was applied before the measurements, even at the same “read” gate voltage

Keywords

MISFET; ferroelectric storage; lanthanum compounds; lead compounds; piezoceramics; strontium compounds; I-V characteristics; MFIS-FET; PLZT-SrTiO₃-Si; PLZT/STO/Si(100) structure; PbLaZrO3TiO3-SrTiO3-Si; fabrication; hysteresis; nonvolatile memory; p-channel metal-ferroelectric-insulator-semiconductor FET; Buffer layers; Capacitance-voltage characteristics; Dielectric constant; FETs; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Semiconductor films; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602719

Filename

602719