Title :
Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures
Author :
Tokumitsu, Eisuke ; Nakamura, Ryo-ichi ; Ishiwara, Hiroshi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We report fabrication and characterization of p-channel metal-ferroelectric-insulator-semiconductor (MFIS)-FETs using the PLZT/STO/Si(100) structures and demonstrate nonvolatile memory operations of the MFISFETs. It is found that ID-VG characteristics of PLZT/STO/Si MFIS-FETs show a hysteresis loop due to the ferroelectric nature of the PLZT film. It is also demonstrated that the ID can be controlled by the “write” pulse, which was applied before the measurements, even at the same “read” gate voltage
Keywords :
MISFET; ferroelectric storage; lanthanum compounds; lead compounds; piezoceramics; strontium compounds; I-V characteristics; MFIS-FET; PLZT-SrTiO3-Si; PLZT/STO/Si(100) structure; PbLaZrO3TiO3-SrTiO3-Si; fabrication; hysteresis; nonvolatile memory; p-channel metal-ferroelectric-insulator-semiconductor FET; Buffer layers; Capacitance-voltage characteristics; Dielectric constant; FETs; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Semiconductor films; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602719
