DocumentCode
3117291
Title
122 GHz ISM-band transceiver concept and silicon ICs for low-cost receiver in SiGe BiCMOS
Author
Schmalz, K. ; Winkler, Wolfgang ; Borngraber, Johannes ; Debski, W. ; Heinemann, B. ; Scheytt, J. Christoph
Author_Institution
IHP GmbH, Frankfurt (Oder), Germany
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at −44 dBm. The receiver consumes 113 mA at a supply voltage of 3.2 V.
Keywords
Bandwidth; BiCMOS integrated circuits; Filters; Gain; Germanium silicon alloys; Noise figure; Silicon germanium; Transceivers; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516260
Filename
5516260
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