Fabrication and evaluation of niobium doped lead titanate thin films

Author

Ibrahim, R.C. ; Sakai, T. ; Nishida, T. ; Horiuchi, T. ; Shiosaki, T. ; Matsushige, K.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

157

Abstract

Several characteristics of niobium doped lead titanate thin films were evaluated. The concentrations of niobium in the films were varied to a maximum of 4 mol%. Resistivity and dielectric loss characteristics of lead titanate were considerably improved with doping. A doping concentration of 2 mol% Nb presented a high tetragonality ratio c/a and a low dielectric constant

Keywords

X-ray diffraction; acoustic materials; ceramics; dielectric losses; doping profiles; electrical resistivity; ferroelectric thin films; lead compounds; microactuators; niobium; permittivity; sputter deposition; I-V characteristics; MEMS; Nb concentration; PbTiO₃:Nb; PbTiO₃:Nb thin films; SAW characteristics; X-ray diffraction; dielectric loss; doping concentration; ferroelectric ceramic; high tetragonality ratio; low dielectric constant; reactive sputtering; resistivity; Conductivity; Doping; Fabrication; Ferroelectric films; Microactuators; Niobium; Semiconductor films; Substrates; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602727

Filename

602727