Title :
High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy
Author :
Sugiyama, Hiroki ; Matsuzaki, Hideaki ; Yokoyama, Haruki ; Enoki, Takatomo
Author_Institution :
NTT Photonics Labs., NTT Corportion, Atsugi, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1-xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm2/Vs at the sheet carrier concentration (Ns) of 2.1×1012 cm-2, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.
Keywords :
III-V semiconductors; MOCVD; composite materials; electron mobility; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; In0.53Ga0.47As-In0.8Ga0.2As; MOVPE; high electron mobility composite-channel modulation-doped structures; metal-organic vapor-phase epitaxy; temperature 293 K to 298 K; Electron mobility; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516265
