Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices

Author

Gunter, J.C. ; Streiffer, S.K. ; Kingon, A.I.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

223

Abstract

Thin films of lead zirconate titanate (PZT) were prepared using a modified sol-gel technique. The samples were annealed on a hotplate at 500°C. The technique yields films crystallized into (111) textured perovskite. The ferroelectric properties of the best film gave a remnant polarization value of 20.0 μC/cm² and coercive field of 44 kV/cm. The microstructure of the film was determined to be fine grained and columnar. Permittivity for the sample was determined to be 1100. Indications of factors influencing the lowering of crystallization temperatures were observed

Keywords

annealing; coercive force; dielectric polarisation; ferroelectric thin films; lead compounds; permittivity; piezoceramics; pyroelectric devices; sol-gel processing; 500 degC; PZT; PbZrO3TiO3; coercive field; columnar microstructure; crystallization temperatures; ferroelectric properties; fine grained microstructure; low temperature preparation; permittivity; pyroelectric devices; remnant polarization value; sol-gel thin films; textured perovskite; Annealing; Crystal microstructure; Crystallization; Ferroelectric films; Ferroelectric materials; Permittivity; Polarization; Temperature; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602739

Filename

602739