Title :
Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics
Author_Institution :
Ural State Univ., Ekaterinburg, Russia
Abstract :
The switching process in normal and relaxor ferroelectrics was described as a result of evolution of domain structure. The original mathematical treatment allows to extract the main kinetic parameters from switching current and elastic light scattering data measured under the action of field pulses. Specific of domain kinetics in ferroelectric thin films and relaxor ceramics was demonstrated. The scenario of evolution of heterophase structure in relaxers during “switching” and spontaneous “backswitching” is proposed
Keywords :
ceramics; electric domains; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; light scattering; piezoceramics; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; domain structure; elastic light scattering; ferroelectric thin film; heterophase structure; relaxor ceramic; spontaneous backswitching; switching kinetics; Ceramics; Electrodes; Ferroelectric materials; Kinetic theory; Polarization; Pulse measurements; Relaxor ferroelectrics; Tail; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602741
