High doping effects on in-situ Ohmic contacts to n-InAs

Author

Baraskar, Ashish ; Jain, Vibhor ; Wistey, Mark A. ; Singisetti, Uttam ; Lee, Yong Ju ; Thibeault, Brian ; Gossard, Arthur ; Rodwell, Mark J.W.

Author_Institution

ECE, Univ. of California, Santa Barbara, CA, USA

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We present the effect of active carrier concentration on the specific contact resistivity (ρ_c) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρ_c obtained through transmission line model measurements was (0.6±0.4)×10^-8 Ω-cm² for samples with 8.2×10¹⁹ cm^-3 active carrier concentration. The contacts were found to remain stable on annealing at 250°C for 1 hour.

Keywords

Fermi level; III-V semiconductors; annealing; carrier density; conduction bands; contact resistance; elemental semiconductors; indium compounds; molybdenum; ohmic contacts; semiconductor doping; semiconductor-metal boundaries; silicon; Fermi level; Mo-InAs:Si; active carrier concentration; annealing; conduction band; doping; specific contact resistivity; transmission line model; Annealing; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Gallium arsenide; Ohmic contacts; Surface contamination; Surface resistance; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516269

Filename

5516269