Design and Evaluation of a 2D Array PIN Photodiode Bump Bonded to Readout IC for the Low Energy X-ray Detector

Author

Yuk, Sunwoo ; Park, Shin-Woong ; Yi, Yun

Author_Institution

Dept. of Electron. & Inf. Eng., Korea Univ., Seoul

fYear

2006

fDate

Aug. 30 2006-Sept. 3 2006

Firstpage

1986

Lastpage

1989

Abstract

A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 mum-depth depletion layer and a 250 mum intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 mum CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics

Keywords

CMOS image sensors; X-ray detection; X-ray imaging; p-i-n photodiodes; readout electronics; 0.35 micron; 250 micron; 2D array PIN photodiode; 2D array radiation sensor; 3.3 V; 30 micron; CMOS technology; bump bonding; depletion layer; intrinsic layer; junction capacitance; leakage current; low energy X-ray detector; readout IC; readout electronics; readout integrated circuit; zero bias; Bonding; CMOS integrated circuits; CMOS process; CMOS technology; Capacitance; Leakage current; Measurement; PIN photodiodes; Sensor arrays; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering in Medicine and Biology Society, 2006. EMBS '06. 28th Annual International Conference of the IEEE

Conference_Location

New York, NY

ISSN

1557-170X

Print_ISBN

1-4244-0032-5

Electronic_ISBN

1557-170X

Type

conf

DOI

10.1109/IEMBS.2006.260570

Filename

4462172