Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates

Author

Kim, Kang Min ; Sakai, Yuji ; Krishnamurthy, Daivasigamani ; Hasegawa, Shigehiko ; Asahi, Hajime

Author_Institution

ISIR, Osaka Univ., Ibaraki, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

TlInGaAsN/TlGaAsN triple quantum wells (TQWs) with different In and N concentration in the quantum wells (QWs) and barriers were grown by gas-source molecular beam epitaxy. The higher Tl incorporation was obtained for the TlInGaAsN/TlGaAsN TQWs having higher N concentration in the QWs region. Temperature dependencies of the photoluminescence (PL) spectra for the TlInGaAsN /TlGaAsN TQWs with different Tl incorporation in active region were compared and studied. Reduction in the temperature dependence of the PL peak energy was observed by increased Tl incorporation in the active region.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; thallium compounds; PL peak energy; TlInGaAsN-TlGaAsN; active region; gas-source molecular beam epitaxy; photoluminescence spectra; triple quantum wells; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Optical fiber communication; Photoluminescence; Plasma temperature; Substrates; Technology management; Temperature dependence; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516273

Filename

5516273