• DocumentCode
    311763
  • Title

    Growth behavior of LaNiO3 and their effect on the pulsed laser deposited PLZT films

  • Author

    Tseng, Tzu-Feng ; Yang, Rong-Pyng ; Liu, Kuo-Shung ; Lin, I-Nan

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    341
  • Abstract
    (Pb0.97La0.03)(Zr0.66Ti0.34 )0.9875O3, PLZT, thin films were successfully deposited on either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates by pulsed laser deposition process. Using LNO/Pt as double layer electrodes resulted in PLZT films with superior electric properties, that is attributed to the low surface resistivity of electrode materials (i.e., ρLNOPt/=0 5 mΩ·cm). The ferroelectric properties of Pr=21.6 μC/cm2, Ec=89 kV/cm and the dielectric constant of K=1,028 were obtained for (PLZT) LNOPt/ thin films
  • Keywords
    ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; piezoceramics; pulsed laser deposition; LNO coating; LNO/Pt double layer electrode; LaNiO3-Pt; PLZT; PLZT film; PbLaZrO3TiO3; Si3N4-Si; Si3N4/Si substrate; dielectric constant; electric properties; ferroelectric properties; growth; pulsed laser deposition; surface resistivity; Conductivity; Dielectric materials; Electrodes; Ferroelectric films; Ferroelectric materials; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.602763
  • Filename
    602763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=311763