DocumentCode :
3117742
Title :
Test structures to verify ESD robustness of on-glass devices in LTPS technology
Author :
Ker, Ming-Dou ; Deng, Chih-Kang ; Yang, Sheng-Chieh ; Tasi, Yaw-Ming
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2004
fDate :
22-25 March 2004
Firstpage :
13
Lastpage :
17
Abstract :
Different test structures, used to investigate the electrostatic discharge (ESD) robustness of on-glass devices in a low temperature poly-Si (LTPS) process, are proposed in this paper. A transmission line pulse generator (TLPG) is used to monitor the I-V behavior of on-glass devices in the high-current region, and to evaluate the robustness of those LTPS devices during ESD stress conditions. Finally, a successful ESD protection design with P+-i-N+ diodes and a VDD-to-VSS ESD clamp circuit integrated on an LCD panel has been demonstrated with a machine-model (MM) ESD level of up to 275 V, whereas the traditional one can only sustain 100 V MM ESD stress.
Keywords :
electrostatic discharge; elemental semiconductors; liquid crystal displays; p-i-n diodes; pulse generators; semiconductor device measurement; silicon; thin film transistors; 100 V; 275 V; ESD protection; ESD robustness; ESD stress conditions; I-V characteristics; LCD panel; LTPS technology; Si; TFT devices; TLPG; VDD-to-VSS ESD clamp; electrostatic discharge; high-current region; low temperature poly-Si process; machine-model ESD level; on-glass devices; p-i-n diodes; transmission line pulse generator; Condition monitoring; Diodes; Electrostatic discharge; Protection; Pulse generation; Robustness; Stress; Temperature; Testing; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
Type :
conf
DOI :
10.1109/ICMTS.2004.1309293
Filename :
1309293
Link To Document :
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