• DocumentCode
    3117764
  • Title

    n+/p ultra-shallow junction formation with plasma immersion ion implantation

  • Author

    Yang, B.L. ; Jones, Erin C. ; Cheung, Nathan W. ; Shao, Jiqun ; Wong, H. ; Cheng, U.C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    1997
  • fDate
    35672
  • Firstpage
    7
  • Lastpage
    10
  • Abstract
    n+/p ultra-shallow junction formed by PH3 Plasma Immersion Ion Implantation (PIII) have been studied. Diodes with good electrical characteristics have been obtained and mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper
  • Keywords
    ion implantation; p-n junctions; PH3; diode; electrical characteristics; n+/p ultra-shallow junction; plasma immersion ion implantation; Diodes; Electric variables; Fabrication; Implants; Plasma accelerators; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma sheaths; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
  • Print_ISBN
    0-7803-3802-2
  • Type

    conf

  • DOI
    10.1109/HKEDM.1997.642287
  • Filename
    642287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3117764