Study on polarization switching as a function of composition in PZT thin films

Author

Belegundu, Uma

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

427

Abstract

Polarization switching has been studied as a function of composition and processing conditions. In tetragonal region, remnant polarization and coercive field increased for higher annealing temperatures. A definite threshold field value where P_R and E _C saturated was observed This is presumed to be due to internal fields created by space charge layers. When studied as a function of composition dependence of P_R and E_C showed saturation in MPB region. Lowest threshold field value was observed for films with Zr=0.50. A maximum of P_R=35 μc/cm ² for Zr=0.50 and a minimum of E_C=43 kV/cm for Zr=0.55 was obtained

Keywords

annealing; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; ferroelectric thin films; lead compounds; piezoceramics; sol-gel processing; space-charge-limited conduction; MPB region; PZT; PbZrO3TiO3; annealing temperatures; coercive field; composition dependence; ferroelectric capacitors; internal fields; polarization switching; processing conditions; remnant polarization; space charge layers; tetragonal region; threshold field value; Capacitors; Electrodes; Ferroelectric materials; Hysteresis; Polarization; Rapid thermal annealing; Temperature dependence; Transistors; Voltage; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602780

Filename

602780