• DocumentCode
    311780
  • Title

    Effects of post-annealing on the leakage and dielectric properties of sputter-deposited Pt/Ba0.5Sr0.5TiO3/Pt thin film capacitor

  • Author

    Fukuda, Yukio ; Numata, Ken ; Aoki, Katsuhiro ; Nishimura, Akitoshi

  • Author_Institution
    Texas Instruments Japan Ltd., Ibaraki, Japan
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    435
  • Abstract
    This paper describes electrical properties of sputter-deposited Pt/Ba0.5Sr0.5TiO3/Pt capacitor. Particular attention will be paid to the effects of a post-annealing in an oxygen ambient on the properties. It is shown that leakage and dielectric properties of the capacitor are drastically improved by the post-annealing. These improvements are attributed to decrease in an oxygen vacancy concentration of the dielectric
  • Keywords
    annealing; barium compounds; dielectric thin films; platinum; sputtered coatings; strontium compounds; thin film capacitors; Pt-Ba0.5Sr0.5TiO3-Pt; dielectric properties; leakage; post-annealing; sputter-deposited Pt/Ba0.5Sr0.5TiO3 /Pt thin film capacitor; vacancy concentration; Capacitors; Current density; Dielectric devices; Dielectric losses; Dielectric substrates; Dielectric thin films; Electrodes; Electrons; Sputtering; Variable speed drives;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.602782
  • Filename
    602782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=311780