PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

Author

Lu, D.X. ; Pun, E.Y.B. ; Zhang, Y.L. ; Wong, E.M.W. ; Chung, P.S. ; Huang, L.B. ; Lee, Z.Y.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

451

Abstract

We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500°C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick train film annealed at 650°C for 60 min has a remnant polarization Pr of 13.2 μC/cm² and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 μm-thick thin film annealed at 600°C for 60 min has a remnant polarization Pr of 16.3 μC/cm² and a coercive fields Ec of 117.6 kV/cm

Keywords

annealing; dielectric losses; ferroelectric thin films; lead compounds; permittivity; piezoceramics; sputter deposition; PZT; PZT thin film; PbZrO3TiO3; Pt/Ti electrode; RF magnetron sputtering; Si substrate; annealing; coercive field; dielectric constant; dielectric loss; electrical properties; lattice parameter; perovskite phase; remnant polarization; structural properties; Annealing; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Electrodes; Polarization; Radio frequency; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602786

Filename

602786