• DocumentCode
    311788
  • Title

    Temperature dependent fatigue in ferroelectric PZT thin films

  • Author

    Paton, E.N. ; Mansour, S.A. ; Bement, A., Jr.

  • Author_Institution
    Purdue Univ., West Lafayette, IN, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    467
  • Abstract
    The rate of electrical fatigue at different temperatures was measured for lead zirconate titanate capacitors with the composition Pb(Zr.60Ti.40)O3. Results showed that a temperature rise contributes to an increasing rate of logarithmic decay in the fatigue profile. We distinguish two thermally dependent stages during fatigue; each plotted as separate Arrhenius relationships. The first stage has an experimentally measured activation energy of 0.22 eV while the second stage has a measured value of 0.042 eV. The physical basis for these activation energies has not been identified due to the complexity of interactions occurring during the switching reversals. Even so, the measured values give some indication of the types of defects and the mechanisms responsible in each stage
  • Keywords
    fatigue; ferroelectric capacitors; ferroelectric thin films; lead compounds; piezoceramics; Arrhenius theory; PZT; PbZrO3TiO3; activation energy; capacitor; defects; electrical fatigue; ferroelectric PZT thin film; switching reversal; temperature dependence; Capacitors; Electric variables measurement; Energy measurement; Fatigue; Ferroelectric materials; Lead; Temperature dependence; Temperature measurement; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.602790
  • Filename
    602790