DocumentCode
311788
Title
Temperature dependent fatigue in ferroelectric PZT thin films
Author
Paton, E.N. ; Mansour, S.A. ; Bement, A., Jr.
Author_Institution
Purdue Univ., West Lafayette, IN, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
467
Abstract
The rate of electrical fatigue at different temperatures was measured for lead zirconate titanate capacitors with the composition Pb(Zr.60Ti.40)O3. Results showed that a temperature rise contributes to an increasing rate of logarithmic decay in the fatigue profile. We distinguish two thermally dependent stages during fatigue; each plotted as separate Arrhenius relationships. The first stage has an experimentally measured activation energy of 0.22 eV while the second stage has a measured value of 0.042 eV. The physical basis for these activation energies has not been identified due to the complexity of interactions occurring during the switching reversals. Even so, the measured values give some indication of the types of defects and the mechanisms responsible in each stage
Keywords
fatigue; ferroelectric capacitors; ferroelectric thin films; lead compounds; piezoceramics; Arrhenius theory; PZT; PbZrO3TiO3; activation energy; capacitor; defects; electrical fatigue; ferroelectric PZT thin film; switching reversal; temperature dependence; Capacitors; Electric variables measurement; Energy measurement; Fatigue; Ferroelectric materials; Lead; Temperature dependence; Temperature measurement; Titanium compounds; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.602790
Filename
602790
Link To Document