Title :
Sr/Bi ratio effects for SrxBiyTa2O 9 grown by pulsed laser ablation
Author :
Thomas, Darin T. ; Fujimura, Norifumi ; Streiffer, S.K. ; Auciello, Orlando ; Kingon, Angus I.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr1-zBi2.1+2/3zTa2O9. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z=0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650°C
Keywords :
bismuth compounds; dielectric polarisation; ferroelectric storage; ferroelectric thin films; pulsed laser deposition; random-access storage; strontium compounds; 650 degC; SrBiTa2O9; ceramic targets; ferroelectric nonvolatile memories; ferroelectric properties; processing temperatures; pulsed laser ablation; switched polarizations; Bismuth; Ferroelectric films; Ferroelectric materials; Laser ablation; Laser modes; Nonvolatile memory; Optical pulses; Polarization; Strontium; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602797
