Characterization of Ru electrodes for Ru/(Ba,Sr)TiO/sub 3//Ru capacitors

Author

Yang, Doo Young ; Oh, Ki-Young ; Lee, Won-Jae ; Vellaikal, M. ; Woolcott, R.R., Jr. ; Streiffer, S.K. ; Kingon, A.I.

Author_Institution

LG Semicon Co. Ltd., Cheongju, South Korea

Volume

1

fYear

1996

fDate

18-21 Aug. 1996

Firstpage

515

Abstract

Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO₃ in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO₂. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375°C showed primarily (001) texturing, and its surface was stable after a 600°C, 30 minute oxidation and a 700°C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms

Keywords

DRAM chips; barium compounds; electrodes; ferroelectric capacitors; ferroelectric storage; ruthenium; sputtered coatings; strontium compounds; CVD SiO/sub 2/; DRAM; MOCVD (Ba,Sr)TiO/sub 3/; Ru electrode; Ru-(BaSr)TiO/sub 3/-Ru; Ru/(Ba,Sr)TiO/sub 3//Ru capacitor; ion beam sputtered metal film; oxidation; polysilicon plug; silicide formation; surface roughness; texturing; Degradation; Electrodes; Ion beams; MOCVD; Plugs; Rough surfaces; Silicides; Surface roughness; Surface texture; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ, USA

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602802

Filename

602802