Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Author

Chih-Yang Lin ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Chih-Hung Pan ; Rui Zhang ; Kuan-Hsien Liu ; Hua-Mao Chen ; Yi-Ting Tseng ; Ya-Chi Hung ; Yong-En Syu ; Jin-Cheng Zheng ; Ying-Lang Wang ; Wei Zhang ; Sze, Simon M.

Author_Institution

Dept. of Phys., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

564

Lastpage

566

Abstract

We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during the set and forming processes of RRAM devices. ITO RRAM devices, however, have an intrinsic capability to limit their current. This letter examines this ITO RRAM current compliance in depth by applying a varied stop-voltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions. Combined with material analysis and conduction current fitting, a model was established.

Keywords

indium compounds; integrated circuit reliability; resistive RAM; ITO; RRAM; conduction current fitting; current self-compliance; equipment current compliance; forming process; material analysis; negative stop voltage; oxygen ion manipulation; resistance random access memory; set process; stop voltage measurement method; Electrodes; Fitting; Indium tin oxide; Ions; Nonvolatile memory; Resistance; Tin; ITO; RRAM; Self-compliance; reset voltage; self-compliance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2424226

Filename

7088548