DocumentCode
311804
Title
The effect of a variation in tone spacing on the intermodulation performance of Class A and Class AB HBT power amplifiers
Author
McIntosh, P.M. ; Snowden, C.M.
Author_Institution
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
371
Abstract
The first investigation into the effect of frequency separation on the intermodulation distortion performance of Heterojunction Bipolar Transistor (HBT) power amplifiers is reported. The measured results show that the frequency spacing between the two input tones affects the intermodulation distortion performance of Class AB power amplifiers, but not Class A power amplifiers.
Keywords
bipolar transistor circuits; heterojunction bipolar transistors; intermodulation distortion; microwave power amplifiers; Class A; Class AB; HBT power amplifier; frequency separation; heterojunction bipolar transistor; intermodulation distortion; tone spacing; Circuit simulation; Distortion measurement; Frequency measurement; Frequency response; Heterojunction bipolar transistors; High power amplifiers; Intermodulation distortion; Operational amplifiers; Power amplifiers; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602811
Filename
602811
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