Title :
Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process
Author :
Giziewicz, Wojciech ; Prasad, Sheila ; Fonstad, Clifton G., Jr.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; p-i-n photodiodes; photodetectors; 4 GHz; GaAs; VLSI process; detector capacitance; integrated optoelectronics; lateral p-i-n photodetectors; lateral p-i-n photodiodes; Detectors; Gallium arsenide; Implants; Ion implantation; MESFET integrated circuits; P-i-n diodes; PIN photodiodes; Parasitic capacitance; Photodetectors; Very large scale integration;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426157
