DocumentCode
311805
Title
A non-quasi-static model of GaInP/AlGaAs HBT for power applications
Author
Fraysse, J.P. ; Floriot, D. ; Auxemery, P. ; Campovecchio, M. ; Quere, R. ; Obregon, J.
Author_Institution
IRCOM, Limoges Univ., France
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
379
Abstract
A NonLinear (NL) model of HBT obtained from I(V) and S-parameters pulsed measurements is presented. Besides thermal effects, this model includes also two transcapacitances to take into account the Non-Quasi-Static (NQS) effects. It is shown that contrary to a Quasi-Static (QS) one, this model allows to predict accurately the behavior of the device in the whole power range as well as a broad frequency band.
Keywords
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device models; GaInP-AlGaAs; GaInP/AlGaAs power HBT; I-V characteristics; S-parameters; nonquasi-static nonlinear model; pulsed measurement; thermal effects; transcapacitances; Capacitance measurement; Current density; Delay; Equations; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Predictive models; Pulse measurements; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602813
Filename
602813
Link To Document