DocumentCode
311808
Title
A comparison of W-band MMIC mixers using InP HEMT technology
Author
Virk, R.S. ; Long Tran ; Matloubian, M. ; Minh Le ; Case, M.G. ; Ngo, C.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
435
Abstract
This paper compares the performance of three different W-band mixer designs in the same InP HEMT technology. A resistive HEMT mixer, an active HEMT mixer, and a rat-race diode mixer are designed and measured for conversion, intermodulation and noise performance for an LO frequency of 94 GHz and IF frequencies ranging from 0.5 to 5 GHz. This is the first direct comparison of three high-performance W-band mixers fabricated in the same InP HEMT technology.
Keywords
HEMT integrated circuits; MMIC mixers; field effect MIMIC; indium compounds; integrated circuit noise; intermodulation; millimetre wave mixers; 0.5 to 5 GHz; 94 GHz; EHF; InP; InP HEMT technology; W-band MMIC mixers; active HEMT mixer; intermodulation; noise performance; rat-race diode mixer; resistive HEMT mixer; Circuits; Diodes; HEMTs; Indium phosphide; MMICs; Mixers; Paper technology; Radio frequency; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602826
Filename
602826
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