Title :
A DC-60 GHz GaAs MMIC switch using novel distributed FET
Author :
Mizutani, H. ; Takayama, Y.
Author_Institution :
C&C LSI Dev. Div., NEC Corp., Kawasaki, Japan
Abstract :
This paper presents the broadest-band distributed FET MMIC switch ever reported for millimeter-wave applications. The developed switch with the novel structure indicated an insertion loss of less than 1.37 dB and an isolation of better than 23.1 dB with monotonous increase up to 39.6 dB from DC to 60 GHz.
Keywords :
III-V semiconductors; JFET integrated circuits; equivalent circuits; field effect MIMIC; field effect transistor switches; gallium arsenide; integrated circuit design; 0 to 60 GHz; 1.37 dB; EHF; GaAs MMIC switch; HJFET process; distributed FET; insertion loss; millimeter-wave applications; Communication switching; Distributed parameter circuits; FETs; Gallium arsenide; Insertion loss; MMICs; Millimeter wave technology; Propagation losses; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602827
