DocumentCode :
311817
Title :
Using MMIC flip chips and CVD diamond for improved thermal management of microwave modules
Author :
Sturdivant, R. ; Chung Ly ; Benson, J. ; Wooldridge, J.
Author_Institution :
Radar & Commun. Sector, Hughes Aircraft Co., USA
Volume :
2
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
505
Abstract :
MMIC flip chips offer several benefits over conventional face-up versions. This includes lower cost, ease of interconnection, self alignment to motherboard, and simultaneous attachment and electrical connection. High power MMIC flip chips use bumps on the FET source to provide for an improved thermal path. When connected to a high thermal conductivity mounting substrate such as aluminum nitride, high power flip chips operate at lower temperatures than conventional flip chips. In fact, modeling has shown that they can have a 15/spl deg/C lower junction temperature compared to conventional MMICs. However, it is often desirable to use lower thermal conductivity mounting substrates such as LTCC. In these cases the junction temperate of a MMIC, flipped or face-up, can be too high for practical use. By using Chemical Vapor Deposition (CVD) diamond substrates, it is possible to reduce the junction temperature to acceptable levels. This work describes the uses of diamond with MMIC flip chips on low thermal conductivity substrates.
Keywords :
CVD coatings; MMIC; diamond; flip-chip devices; modules; C; CVD diamond substrate; MMIC flip chip; high power microwave module; thermal conductivity; thermal management; Conducting materials; Dielectric materials; Electronics packaging; FETs; Fabrication; Flip chip; MMICs; Temperature; Thermal conductivity; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.602842
Filename :
602842
Link To Document :
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