DocumentCode
311831
Title
Discontinuity effects on high frequency transistors
Author
Megahed, M.A. ; El-Ghazaly, S.M.
Author_Institution
Peregrine Semicond. Corp., San Diego, CA, USA
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
609
Abstract
The effects of input and output discontinuities on high frequency GaAs MESFET performance are analyzed. The transistor circuit, including both the active and passive elements, is evaluated using full-wave three dimensional physically based model. The S-parameters are simulated for different circuit topologies. Results clearly shows that the effect of these discontinuities is significant.
Keywords
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 5 to 150 GHz; GaAs; GaAs MESFET; S-parameters; discontinuity effects; full-wave 3D physically based model; high frequency transistors; input discontinuities; output discontinuities; Circuit simulation; Coplanar transmission lines; Electrodes; Electrons; FETs; Finite difference methods; Frequency; Gallium arsenide; MESFETs; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602866
Filename
602866
Link To Document