Title :
Discontinuity effects on high frequency transistors
Author :
Megahed, M.A. ; El-Ghazaly, S.M.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
The effects of input and output discontinuities on high frequency GaAs MESFET performance are analyzed. The transistor circuit, including both the active and passive elements, is evaluated using full-wave three dimensional physically based model. The S-parameters are simulated for different circuit topologies. Results clearly shows that the effect of these discontinuities is significant.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; 5 to 150 GHz; GaAs; GaAs MESFET; S-parameters; discontinuity effects; full-wave 3D physically based model; high frequency transistors; input discontinuities; output discontinuities; Circuit simulation; Coplanar transmission lines; Electrodes; Electrons; FETs; Finite difference methods; Frequency; Gallium arsenide; MESFETs; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602866
