Title :
A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs
Author :
Ishida, H. ; Koizumi, H. ; Miyatsuji, K. ; Takenaka, H. ; Tanaka, T. ; Ueda, D.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; gallium arsenide; land mobile radio; radio receivers; 1.5 GHz; 1.6 dB; 3 mA; 3.6 V; 30 dB; GaAs; MODFETs; UHF IC; current-reuse configuration; local amplifier; low noise amplifier; low power front-end IC; mixer; power dissipation reduction; Current supplies; Frequency conversion; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; Mixers; Noise measurement; Performance gain; Power dissipation; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602880
