Multilayer passive components for uniplanar Si/SiGe MMICs

Author

Gokdemir, T. ; Karacaoglu, U. ; Budimir, D. ; Economides, S.B. ; Khalid, A. ; Rezazadeh, A.A. ; Robertson, I.D.

Author_Institution

Dept. of Electron. & Electr. Eng., King´s Coll., London, UK

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

761

Abstract

This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.

Keywords

Ge-Si alloys; bipolar MMIC; capacitors; coplanar waveguides; elemental semiconductors; inductors; lumped parameter networks; microstrip couplers; microstrip lines; silicon; transformers; waveguide couplers; CPW couplers; CPW transmission lines; SOI bonded silicon technology; Si; Si substrates; Si-SiGe; Si-SiO/sub 2/; Si/SiGe uniplanar MMICs; TFMS couplers; TFMS transmission lines; capacitors; high resistivity Si; inductors; multilayer passive components; planar transformers; polyimide layer; Bonding; Conductivity; Coplanar waveguides; Germanium silicon alloys; MMICs; Nonhomogeneous media; Planar transmission lines; Polyimides; Silicon compounds; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602901

Filename

602901