Title :
1 GHz GaAs ADC building blocks
Author :
Thomas, Francois ; Debrie, Francis ; Gloanec, Maurice ; Martin, Philippe ; Ruggeri, Stephane ; Uro, Jean Marie
Author_Institution :
Thomson Hybrides & Microondes-DAG, Orsay, France
Abstract :
Discussed the development of commercial GaAs ICs for high speed, 6-bit, 1 Gsample/s data acquisition, using a low-cost conventional D-MESFET technology. First-generation S/Hs (sample-and-holds) and comparators are considered. Diode-bridge and FET-switch S/Hs are compared; best performances have been achieved with diode-bridge switches: 1 ns, 6-bit. Comparators provide 6-bit sensitivity at 1 GHz, but require offset adjust. Second-generation ADC (analog-to-digital converters) building blocks are also discussed. The auto biased differential input stage has been developed which is suitable for 4-bit ADC. A dynamic cell involving autocalibration techniques is required for 6-bit ADC. Using these blocks, a 4-bit 1-Gs/s full Nyquist single-ship ADC, including an S/H, has been designed. A 6-bit ADC is under design
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue-digital conversion; comparators (circuits); data acquisition; field effect integrated circuits; gallium arsenide; sample and hold circuits; semiconductor switches; signal processing equipment; 1 GHz; 1 ns; 4 bit; 4-bit ADC; 6 bit; 6-bit ADC; D-MESFET technology; GaAs; auto biased differential input stage; autocalibration; comparators; data acquisition; diode-bridge switches; dynamic cell; microwave IC; sample and hold circuit; Data acquisition; Dielectric thin films; FETs; Gallium arsenide; Integrated circuit technology; Logic; MESFETs; Silicon; Switches; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20829
