Title :
Intense photoluminescence emission from amorphous indium oxynitride thin films by filtered cathodic vacuum arc technique
Author :
Ji, X.H. ; Lau, S.P. ; Zhang, Q.Y.
Author_Institution :
Key Lab. of Special Functional Mater., South China Univ. of Technol., Guangzhou, China
Abstract :
Intense photoluminescence centered at around 1.3 eV has been observed from amorphous InNxOy films, and a slightly blue-shift of PL at 77 K in comparison with that of 300 K has been detected.
Keywords :
amorphous state; indium compounds; ion beam assisted deposition; photoluminescence; spectral line shift; thin films; vacuum deposition; InNxOy; amorphous thin films; blue-shift; electrical properties; filtered cathodic vacuum arc; indium oxynitride thin films; intense photoluminescence; ion-beam-assisted deposition; physical properties; temperature 300 K; temperature 77 K; Amorphous materials; Bonding; Curve fitting; Etching; Indium; Photoluminescence; Photonic band gap; Transistors; Vacuum arcs; Vacuum technology;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5216181
