Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

Author

Socher, E. ; Bochobza-Degani, O. ; Nemirovsky, Y.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2000

fDate

2000

Firstpage

417

Lastpage

420

Abstract

CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside RIE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP´s down to 0.4 nW/ Hz and response times down to 3 msec in 70*70 μm² pixels

Keywords

CMOS integrated circuits; infrared detectors; integrated circuit technology; micromachining; microsensors; sputter etching; thermal resistance; thermocouples; 3 ms; CMOS compatible frontside micromachining; IR detection; RIE micromachining; integrated thermoelectric sensors; spiral structure; standard CMOS process; suspended structures; thermal isolation enhancement; thermal resistance enhancement; CMOS process; Delay; Electrical resistance measurement; Infrared detectors; Infrared sensors; Micromachining; Spirals; Thermal resistance; Thermal sensors; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and electronic engineers in israel, 2000. the 21st ieee convention of the

Conference_Location

Tel-Aviv

Print_ISBN

0-7803-5842-2

Type

conf

DOI

10.1109/EEEI.2000.924455

Filename

924455