1/f noise modeling of InP HBT-based Schottky diodes for monolithic monolithic millimeter-wave mixers

Author

Chung, Y.H. ; Sato, K.F. ; Chan, C.W. ; Lin, E.W. ; Grossman, P.C. ; Tran, L.T. ; Cowles, J. ; Wang, H. ; Oki, A.K. ; Najita, K. ; DeLisio, M.P.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

841

Abstract

We present a procedure for modeling the low-frequency 1/f noise properties of millimeter-wave InP HBT-based Schottky diodes. These noise properties, coupled with the device´s small and large-signal characteristics, enable the generation of a comprehensive diode model. The model is particularly useful for analyzing mixer and detector MMIC´s. Simulations using this model compare well with W-band mixer measurements.

Keywords

1/f noise; III-V semiconductors; MMIC mixers; Schottky diode mixers; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave diodes; millimetre wave mixers; semiconductor device models; semiconductor device noise; 1/f noise model; InP; InP HBT Schottky diode; MMIC detector; W-band; large-signal characteristics; monolithic millimeter-wave mixer; simulation; small-signal characteristics; Circuit noise; Current measurement; Heterojunction bipolar transistors; Indium phosphide; Low-frequency noise; MMICs; Millimeter wave measurements; Millimeter wave technology; Noise measurement; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602928

Filename

602928