Modeling and characterization of CMOS readout circuits for monolithic uncooled IR thermoelectric sensors

Author

Socher, E. ; Bochobza-Degani, O. ; Nemirovsky, Y.

fYear

2000

fDate

2000

Firstpage

421

Lastpage

424

Abstract

CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and correlated-double-sampling (CDS) techniques were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect on the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of 0.5 μV in a 300 Hz bandwidth

Keywords

CMOS analogue integrated circuits; infrared detectors; integrated circuit modelling; integrated circuit noise; microsensors; readout electronics; signal sampling; thermoelectric devices; 300 Hz; CMOS chips; DC-coupling technique; MOS readout circuits; characterization; correlated-double-sampling technique; integrated thermoelectric sensors; modeling; monolithic IR thermoelectric sensors; noise contributions; sensor noise; uncooled IR thermoelectric sensors; Bandwidth; Circuit analysis; Circuit noise; Infrared sensors; Noise measurement; Semiconductor device measurement; Semiconductor device modeling; Sensor phenomena and characterization; Thermal sensors; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and electronic engineers in israel, 2000. the 21st ieee convention of the

Conference_Location

Tel-Aviv

Print_ISBN

0-7803-5842-2

Type

conf

DOI

10.1109/EEEI.2000.924456

Filename

924456