Transistor parameter extraction using DC, S-parameter and noise data simultaneously

This paper presents, for the first time, an integrated method for transistor model parameter extraction by fitting the DC, multi-bias S-parameter and noise measurements simultaneously. The extracted model provides accurate small-signal, large-signal and noise characteristics. This technique is demonstrated for a Raytheon foundry HBT and excellent results are obtained. Self-heating effects are taken into consideration in the parameter extraction procedure.