Improvements on a MOSFET model for non-linear RF simulations

Author

Biber, C.E. ; Schmatz, M.L. ; Morf, T.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

865

Abstract

As the gate lengths of silicon MOSFETs become smaller and smaller, these devices are usable to frequencies in the GHz range. The non-linear MOSFET model presented in this paper is based on S-parameter measurements over a large bias range and has been implemented in a SPICE simulator. The improvements consist of new equations for the non-linear capacitances and output conductance of the MOS transistor. This new large signal model shows very good agreement between measurement and simulation up to 10 GHz.

Keywords

MOSFET; S-parameters; SPICE; UHF field effect transistors; capacitance; digital simulation; elemental semiconductors; microwave field effect transistors; semiconductor device models; silicon; MOS transistor; MOSFET model; S-parameter measurements; SPICE simulator; Si; bias range; gate lengths; large signal model; nonlinear RF simulations; nonlinear capacitances; output conductance; Capacitance; Circuit simulation; Laboratories; MOSFET circuits; Microwave technology; Nonlinear equations; Predictive models; Radio frequency; SPICE; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602936

Filename

602936