Title :
A distributed, measurement based, nonlinear model of FETs for high frequencies applications
Author :
Mallet-Guy, B. ; Ouarch, Z. ; Prigent, M. ; Quere, R. ; Obregon, J.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
For the first time, a FET nonlinear model, distributed along the gate length and extracted from pulsed I(V) and pulsed S-parameters measurements is presented. This model has led to a better prediction of power saturation mechanism and offers promising perspectives for intermodulation and nonlinear noise modeling at high microwave frequencies.
Keywords :
S-parameters; intermodulation; microwave field effect transistors; microwave measurement; semiconductor device models; FETs; gate length; high frequency applications; intermodulation; microwave frequencies; nonlinear model; nonlinear noise modeling; power saturation mechanism; pulsed I(V) measurements; pulsed S-parameters measurements; Circuit noise; Circuit simulation; Circuit topology; Computational modeling; Equivalent circuits; Frequency measurement; Microwave FETs; Predictive models; Pulse measurements; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602937
