DocumentCode
311877
Title
A distributed, measurement based, nonlinear model of FETs for high frequencies applications
Author
Mallet-Guy, B. ; Ouarch, Z. ; Prigent, M. ; Quere, R. ; Obregon, J.
Author_Institution
IRCOM, Limoges Univ., France
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
869
Abstract
For the first time, a FET nonlinear model, distributed along the gate length and extracted from pulsed I(V) and pulsed S-parameters measurements is presented. This model has led to a better prediction of power saturation mechanism and offers promising perspectives for intermodulation and nonlinear noise modeling at high microwave frequencies.
Keywords
S-parameters; intermodulation; microwave field effect transistors; microwave measurement; semiconductor device models; FETs; gate length; high frequency applications; intermodulation; microwave frequencies; nonlinear model; nonlinear noise modeling; power saturation mechanism; pulsed I(V) measurements; pulsed S-parameters measurements; Circuit noise; Circuit simulation; Circuit topology; Computational modeling; Equivalent circuits; Frequency measurement; Microwave FETs; Predictive models; Pulse measurements; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602937
Filename
602937
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