Title :
Novel method for determination of junction-FET access resistances
Author :
Osgood, K. ; Parker, A.
Author_Institution :
Electron. Dept., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
A new method for extracting JFET access resistances, which does not need to consider the intrinsic channel resistance of the device, is presented. The method uses an impedance data set measured over a range of bias points. The data set is reduced to those points with reciprocal impedance matrices and appropriate bias conditions. The extraction procedure is ideal for automated device characterisation.
Keywords :
electric impedance; junction gate field effect transistors; microwave field effect transistors; microwave measurement; semiconductor device testing; automated device characterisation; bias points; extraction procedure; impedance data set; junction-FET access resistances; reciprocal impedance matrices; Current measurement; Data mining; Distortion measurement; Electrical resistance measurement; Equations; Frequency; Impedance measurement; MESFETs; Performance gain; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602938
