Title :
Nonlinear modelling of SiGe HBTs up to 50 GHz
Author :
Rheinfelder, C. ; Rudolph, M. ; Beisswanger, F. ; Heinrich, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; leakage currents; microwave bipolar transistors; semiconductor device models; semiconductor materials; 0.05 to 50 GHz; DC parameters; HBTs; Kirk-effect; MMIC oscillator design; S parameters; SiGe; large-signal model; nonideal leakage currents; thermal behavior; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Leakage current; MMICs; Microwave oscillators; Resistors; Semiconductor process modeling; Silicon germanium; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602939
