First demonstration of a 0.5 W, 2 to 8 GHz MMIC HBT distributed power amplifier based on a large signal design approach

Author

Viaud, J.P. ; Lajugie, M. ; Quere, R. ; Obregon, J.

Author_Institution

Thomson-CSF Microelectron., Massy, France

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

893

Abstract

In this paper we report the results of the first demonstration of a 0.5 Watt, 2 to 8 GHz MMIC HBT distributed power amplifier optimised with a new design methodology. Initially developed for MESFET transistors, this new design methodology has been applied to HBT devices to obtain simultaneously both high power and high efficiency operation. Thus, a power density performance greater than 1 W/mm has been demonstrated compared to the MESFET where a typical value of 0.35 W/mm can be observed. Moreover, an average value of 20% power added efficiency between 2 and 8 GHZ has been measured with a peak efficiency of 30% at 3 GHz.

Keywords

MMIC power amplifiers; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; integrated circuit design; 0.5 W; 2 to 8 GHz; 20 to 30 percent; MMIC HBT distributed power amplifier; average value; high efficiency operation; high power operation; large signal design approach; peak efficiency; power density performance; Design methodology; Design optimization; Distributed amplifiers; Heterojunction bipolar transistors; High power amplifiers; MESFETs; MMICs; Power amplifiers; Power generation; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602943

Filename

602943