Robust cascode HBTs for efficient high power microwave applications

Author

Salib, M. ; Bayraktaroglu, B.

Author_Institution

Northrop Grumman Corp., Baltimore, MD, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

897

Abstract

A new cascode HBT design was developed to overcome the thermal instability of high power HBTs without using ballast resistors. Thermally-stabilized cascode HBTs (TSC-HBTs) achieved unconditional thermal stability under dc bias as well as under high RF drive with large output mismatch conditions. Various cell sizes were developed for X/Ku-band applications to produce 0.25 W to 1.0 W output power with high power-added efficiency (70% at 8 GHz) and high power gain (>20 dB at 14 GHz).

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; thermal stability; 0.25 to 1.0 W; 70 percent; 8 to 14 GHz; Ku-band; RF drive; X-band; cell sizes; high power microwave applications; output mismatch conditions; output power; power gain; power-added efficiency; thermal instability; thermally-stabilized cascode HBTs; unconditional thermal stability; Electronic ballasts; Fingers; Heterojunction bipolar transistors; Microwave devices; Radio frequency; Resistors; Robustness; Thermal resistance; Thermal stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602944

Filename

602944