The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

Author

Lin, Jian-Ming ; Chou, Li-Chang ; Lin, Hao-Hsiung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

3

Abstract

The competition behavior between two Group V atoms is significant in the epitaxy growth of III-V-V compounds. We have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition behavior between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple quantum wells (MQWs) on GaAs (100) substrates by gas-source molecular-beam epitaxy (GSMBE). The strain-induced incorporation coefficient due to lattice mismatch between the growing film and substrate is also taken into account.

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; thermodynamics; GaAs; GaAs (100) substrates; GaAsSb-GaAs; epitaxy growth; gas source molecular beam epitaxy; lattice mismatch; multiple quantum wells; precursor state; pseudomorphic growth; strain-induced incorporation coefficient; thermodynamic model; Atomic layer deposition; Capacitive sensors; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Quantum well devices; Semiconductor process modeling; Substrates; Temperature; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516337

Filename

5516337