Power performance of thermally-shunted heterojunction bipolar transistors

Author

Jenkins, T. ; Bozada, C. ; Cerny, C. ; DeSalvo, G. ; Dettmer, R. ; Ebel, J. ; Gillespie, J. ; Havasy, C. ; Kehias, L. ; Nakano, K. ; Pettiford, C. ; Quach, T. ; Sewell, J. ; Via, D. ; Anholt, R.

Author_Institution

Electron Devices Div., Avionics Lab., Wright-Patterson AFB, OH, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

949

Abstract

The effects of layout and thermal shunt configuration on output power, efficiency, and gain of thermally-shunted AlGaAs/GaAs HBT´s were investigated. A maximum power density of 16 mW//spl mu/m/sup 2/ at 10 GHz (CW) was observed. The power gain and power-added efficiency (PAE) at this power density were 7.8 dB and 65%, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; 10 GHz; 65 percent; 7.8 dB; AlGaAs-GaAs; efficiency; layout; maximum power density; microwave bipolar transistors; output power; power gain; power-added efficiency; thermally-shunted heterojunction bipolar transistors; Aerospace electronics; Doping; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Laboratories; Microwave devices; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602957

Filename

602957